Piezotronic PIN diode for microwave and piezophototronic devices

نویسندگان
چکیده

برای دانلود باید عضویت طلایی داشته باشید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Piezotronic and Piezophototronic Effects

Owing to the polarization of ions in a crystal that has noncentral symmetry, a piezoelectric potential (piezopotential) is created in the material by applying a stress. The creation of piezopotential together with the presence of Schottky contacts are the fundamental physics responsible for a few important nanotechnologies. The nanogenerator is based on the piezopotential-driven transient flow ...

متن کامل

An Investigation of new combination of PIN diode for RF/Microwave Switch

This paper presents a new combination of PIN diode switch for low insertion loss and high isolation. The combination is designed for frequency 0.1 to 10 GHz. In new combination we connect the two series-shunt combination one is across the input port and the other one is across the output port with one shunt diode connect between two λ/4 micro strip line. It has been concluded that in new combin...

متن کامل

Parameter Extraction Software for Silicon Carbide Schottky, Merged Pin Schottky and Pin Power Diode Models

A software program for on-state parameter extraction is presented for the realization of a high quality model for SiC Schottky, Merged PiN Schottky, and PiN Power diodes based on McNutt and Mantooth's Comprehensive SiC Diode model [ 1 ].

متن کامل

GaN nanobelt-based strain-gated piezotronic logic devices and computation.

Using the piezoelectric polarization charges created at the metal-GaN nanobelt (NB) interface under strain to modulate transport of local charge carriers across the Schottky barrier, the piezotronic effect is utilized to convert mechanical stimuli applied on the wurtzite-structured GaN NB into electronic controlling signals, based on which the GaN NB strain-gated transistors (SGTs) have been fa...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

ژورنال

عنوان ژورنال: Semiconductor Science and Technology

سال: 2017

ISSN: 0268-1242,1361-6641

DOI: 10.1088/1361-6641/aa5ca1